Supplementary Information: Photoconductivity of biased graphene

Photoconductivity of biased graphene

Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers and plasmonic devices. The origin of the photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here, we repor...

Anisotropic photoconductivity in graphene

We investigate the photoconductivity of graphene within the relaxation time approximation. In presence of the inter-band transitions induced by the linearly polarized light the photoconductivity turns out to be highly anisotropic due to the pseudospin selection rule for Dirac-like carriers. The effect can be observed in clean undoped graphene samples and be utilized for light polarization detec...

Semiconducting-to-metallic photoconductivity crossover and temperature-dependent Drude weight in graphene.

We investigate the transient photoconductivity of graphene at various gate-tuned carrier densities by optical-pump terahertz-probe spectroscopy. We demonstrate that graphene exhibits semiconducting positive photoconductivity near zero carrier density, which crosses over to metallic negative photoconductivity at high carrier density. These observations can be accounted for by the interplay betwe...

Controlling the photoconductivity: Graphene oxide and polyaniline self assembled intercalation

High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes

Articles you may be interested in Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment Appl. Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method Appl. Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes...